![]() The third chapter deals with a more detailed description of an LNA and parameters that characterize it, and illustrates the RF design methodologies. The second chapter is entirely devoted to the study of noise components of a MOS device, and the calculation of the overall noise figure of this device. The first chapter of the discussion was devoted to the study LNA in a transceiver system, and the study of the theory of noise in electronic circuits, also recalling the basic concepts on MOS device. ![]() The technological parameters to which reference is made for the dimensioning of the circuit are those relating to technology N5BO MOSIS 0.5 and the supply voltage is 1V. Reverse isolation (S12) of the order of-45dB Output return loss (S22) of the order of-15dB Input return loss (S11) of the order of-8dB The specifications to which this circuit must satisfy are: The problem addressed in the examiner is the analysis and design of an LNA RF in CMOS technology, used in DECT, PCS and GPS applications.
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